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›› 2012, Vol. 12 ›› Issue (3): 516-521.

• 材料工程专栏 • 上一篇    下一篇

Preparation and Characterization of Sn-doped ZnO Particles with Low Infrared Emissivity

赵亮 朱永平   

  1. 中国科学院过程工程研究所多相复杂系统国家重点实验室 中国科学院过程研究所多相反应开放实验室
  • 收稿日期:2012-05-11 修回日期:2012-05-28 出版日期:2012-06-20 发布日期:2012-06-20
  • 通讯作者: 赵亮

Preparation and Characterization of Sn-doped ZnO Particles with Low Infrared Emissivity

ZHAO Liang ZHU Yong-ping   

  1. State Key Laboratory of Multi-Phase Complex Systems Institute of Process Engineering, Chinese Academy of sciences Key Lab of Multi-phase Reactions, Institute of Process Engineering. Chinese Academy of Sciences
  • Received:2012-05-11 Revised:2012-05-28 Online:2012-06-20 Published:2012-06-20
  • Contact: ZHAO Liang

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摘要： Sn-doped ZnO particles were successfully synthesized by chemical co-precipitation method. Their morphology, phase, microstructure and infrared emissivity were characterized. The results show that the Sn-doped ZnO particles are of ellipsoid shape, their crystalline structure changed with thermal process temperature, the optimal thermal process temperature and Sn-doped proportion are 1000℃ and 15%, respectively, the minimum emissivity values are 0.42, 0.28, 0.46 and 0.48 corresponding to the infrared wavelengths of 0~∞, 3~5, 8~14 and 14~20 mm, which indicates that the Sn-doped ZnO particles have the application potential as low infrared emissivity material.

关键词: Sn-doped ZnO particles, co-precipitation, low infrared emissivity

Abstract: Sn-doped ZnO particles were successfully synthesized by chemical co-precipitation method. Their morphology, phase, microstructure and infrared emissivity were characterized. The results show that the Sn-doped ZnO particles are of ellipsoid shape, their crystalline structure changed with thermal process temperature, the optimal thermal process temperature and Sn-doped proportion are 1000℃ and 15%, respectively, the minimum emissivity values are 0.42, 0.28, 0.46 and 0.48 corresponding to the infrared wavelengths of 0~∞, 3~5, 8~14 and 14~20 mm, which indicates that the Sn-doped ZnO particles have the application potential as low infrared emissivity material.

Key words: Sn-doped ZnO particles, co-precipitation, low infrared emissivity

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