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过程工程学报 ›› 2015, Vol. 15 ›› Issue (5): 795-800.DOI: 10.12034/j.issn.1009-606X.215245CSTR: 32067.14.jproeng.215245

• 反应与分离 • 上一篇    下一篇

银铟在复杂硫化锌精矿加压酸浸中的行为

李兰韵 谢刚 闫书阳   

  1. 昆明理工大学冶金与能源工程学院 昆明冶金研究院 昆明理工大学冶金与能源工程学院
  • 收稿日期:2015-06-18 修回日期:2015-07-31 出版日期:2015-10-20 发布日期:2015-10-20
  • 通讯作者: 谢刚

Behaviors of Indium and Silver in High Pressure Acid Leaching of Multimetallic Zinc Sulfide Concentrate

LI Lan-yun XIE Gang YAN Shu-yang   

  1. Kunming University of Science and Technology Department of Metallurgy, Kunming Metallurgical Research Institute Kunming University of Science and Technology
  • Received:2015-06-18 Revised:2015-07-31 Online:2015-10-20 Published:2015-10-20
  • Contact: XIE Gang

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被引次数

3

摘要： 实验研究了银铟在复杂硫化锌精矿加压酸浸过程中的行为，考察了浸出温度、浸出时间、硫酸浓度、氧压、精矿粒度及液固比对铟浸出率和银入渣率的影响，分析了铟在浸出初期的动力学. 结果表明，在浸出温度150℃、浸出时间90 min、硫酸浓度152 g/L、氧分压1.2 MPa、精矿粒度<45 mm及液固比5 mL/g的条件下，铟浸出率达76%以上，银入渣率达98%以上. In的初期浸出符合核收缩模型，受界面化学反应控制，表观活化能为70.67 kJ/mol.

关键词: 复杂硫化锌精矿, 加压酸浸, 铟, 银, 动力学

Abstract: The behaviors of indium and silver in the acid leaching process of complex zinc sulfide concentrate were studied under high pressure. The effects of leaching temperature, leaching time, sulfuric acid concentration, oxygen partial pressure, particle size and ratio of solid to liquid on the indium leaching rate and the rate of silver entering leaching residue were examined, and the leaching kinetics in initial leaching stage was studied. The results show that the indium leaching rate can reach more than 76% and the rate of silver entering leaching residue is over 98% under the optimum conditions of leaching temperature 150℃, leaching time 90 min, sulfuric acid concentration 152 g/L, oxygen partial pressure 1.2 MPa, particle size <45 mm and ratio of solid to liquid 5 mL/g. Besides, the indium leaching in initial leaching stage is in line with shrinking core model, controlled by the surface chemical reaction, and the apparent activation energy is 70.67 kJ/mol.

Key words: multimetallic zinc sulfide concentrate, pressure leaching, indium, silver, kinetics

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