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›› 2002, Vol. 2 ›› Issue (5): 0-0.

• 5 •    

VO2薄膜相变及其温度滞后

胡再勇, 徐楚韶, 杨绍利, 陈光碧   

  1. 重庆大学材料科学与工程学院，重庆 400044
  • 出版日期:2002-10-20 发布日期:2002-10-20

Phase Transition and Transition Temperature Hysteresis of VO2 Thin Film

HU Zai-yong, XU Chu-shao, YANG Shao-li, CHEN Guang-bi   

  1. College of Material Science and Engineering, Chongqing University, Chongqing 400044, China
  • Online:2002-10-20 Published:2002-10-20

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摘要： 以攀钢产V2O5为原料，采用无机胶体法制备电阻突变VO2薄膜，研究了VO2薄膜的电阻突变温度、突变数量级及其突变温度滞后. 结果表明，VO2薄膜相变温度为35℃，制备方法和衬底材质对VO2薄膜的电阻突变数量级有较大影响. 以普通玻璃和石英玻璃作衬底、用H2还原法，可使VO2薄膜的电阻突变达到2~3个数量级，用N2热分解法仅能达到1.5~2个数量级；普通玻璃衬底上VO2薄膜的电阻突变数量级小于石英玻璃衬底上的VO2薄膜的电阻突变数量级. VO2薄膜的电阻突变温度滞后为1~6℃，电阻突变数量级、衬底材质和制备方法对其有较大影响.

关键词: 无机胶体法, VO2, 薄膜, M-S相变, 温度滞后

Abstract: The VO2 thin film was prepared by the colloid method with industrial V2O5 as raw material. The properties of the VO2 film such as resistance abrupt drop temperature, phase transotion temperature hysteresis are examined. The results show that the VO2 thin film phase transition temperature is 35oC. Preparation method and substrate show greater effect on resistance abrupt change order, which can reach 2~3 order if common glass or quartz glass were employed in underlay by H2 reduction process, while it can reach 1.5~2 order of magnitude by N2 thermal decomposition. The resistance abrupt change order of magnitude is larger for VO2 film with quartz glass as substrate, the transition temperature hysteresis is 1~6oC, and closely related with the resistance abrupt change order, underlay, substrate and preparation method.

Key words: inorganic colloid method, vanadium dioxide, thin film, M-S phase transition, temperature hysteresis

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