Preparation and Characterization of SiC Thin Film on Cordierite with Chemical Vapor Deposition
YIN Bo-wen YANG Yan MA Bing ZHANG Wei-gang
State Key Lab. Multi-phase Complex System, Institute of Process Engineering, CAS State Key Lab. Multi-phase Complex System, Institute of Process Engineering, CAS Key Lab of Multi-phase Reactions, Institute of Process Engineering. Chinese Academy of Sciences
Abstract： Thin film of SiC on porous cordierite was prepared from CH3SiCl3-H2 and SiCl4-CH4-H2 gaseous sources by isothermal and isobaric chemical vapor deposition (CVD) at the temperatures of 1100 and 1000℃ and ambient pressure. The as-deposited thin film was characterized with scanning electron microscopy, X-ray diffraction, Raman micro-spectrum, high-resolution transmission electron microscopy and EDAX elementary analysis. The results indicated that the surface morphology of SiC thin film deposited from CH3SiCl3-H2 source showed pyramid structure which was significantly different from that from SiCl4-CH4-H2 source. Pyramid structure revealed that (111) plane of b-SiC was the preferred orientation in the XRD pattern. In most cases, the average size of pyramid shaped particles deposited from CH3SiCl3-H2 source was bigger than that from SiCl4-CH4-H2. The thin film deposited from CH3SiCl3-H2 source consisted of pure b-SiC phase, and its Si content increased with decreasing temperature. However, the SiC film from SiCl4-CH4-H2 source was amorphous carbon-doped SiC. Its C content increased with decreasing temperature. Additionally, sheet resistance of the SiC film from CH3SiCl3-H2 source was above a kW scale, increasing with temperature decreasing, while that from SiCl4-CH4-H2 source decreased rapidly with decreasing temperature. Sheet resistance of the SiC film deposited at 1100℃ from SiCl4-CH4-H2 source was above a kW scale, falling to a W scale at 1000℃.
尹博文 杨艳 马兵 张伟刚. 堇青石基体化学气相沉积碳化硅薄膜及其性能表征[J]. , 2008, 8(3): 589-594.
YIN Bo-wen YANG Yan MA Bing ZHANG Wei-gang. Preparation and Characterization of SiC Thin Film on Cordierite with Chemical Vapor Deposition. , 2008, 8(3): 589-594.
2008, Vol. 8 
