碳化硅晶体生长炉辐射换热特性的数值模拟

doi:10.12034/j.issn.1009-606X.217295

过程工程学报 ›› 2018, Vol. 18 ›› Issue (2): 280-287.DOI: 10.12034/j.issn.1009-606X.217295

碳化硅晶体生长炉辐射换热特性的数值模拟

杨春振^1,2，刘光霞^1*，陈成敏¹，许敏¹，王立秋^1,3

1. 齐鲁工业大学(山东省科学院)能源研究所，山东济南 250014；2. 山东神华山大能源环境有限公司，山东济南 250014； 3. 香港大学机械工程系，香港 999077

收稿日期:2017-08-14 修回日期:2017-09-28 出版日期:2018-04-22 发布日期:2018-04-10
通讯作者: 刘光霞 xiazi_52@163.com
基金资助:
碳化硅晶体生长模拟与控制系统;碳化硅晶体生长温度场多态性及其可控性模拟研究;SIC晶体生长室温度场的非线性数值模拟研究;DKDP晶体生长溶液流动和传热数值模拟研究

Numerical Simulation of Radiation Heat Transfer in SiC Crystal Growth Furnace

Chunzhen YANG^1,2, Guangxia LIU^1*, Chengmin CHEN¹, Min XU¹, Liqiu WANG^1,3

1. Energy Research Institute of Qilu University of Technology (Shandong Academy of Science), Jinan, Shandong 250014, China; 2. Shandong Shenhua Shanda Energy & Environment Co., Ltd., Jinan, Shandong 250014, China; 3. Department of Mechanical Engineering, The University of Hong Kong, Hong Kong 999077, China

Received:2017-08-14 Revised:2017-09-28 Online:2018-04-22 Published:2018-04-10

摘要/Abstract

摘要： 采用C语言搭建了碳化硅(SiC)晶体生长炉三维温度场数值模拟平台，基于柱坐标系构建生长炉物理模型，采用有限体积法离散数学模型，利用S2S(Surface to Surface)辐射模型考察了生长室内的辐射换热特性，提出判断辐射面可视性的最短距离法. 模拟了电流强度1250 A、电流频率16 kHz条件下的生长炉温度场，定量揭示了生长室内的辐射换热强度；采用标准偏差法研究了线圈结构对晶体内部温度及温度梯度均匀性的影响. 结果表明，螺旋电磁加热线圈容易导致生长炉内部温度场呈非轴对称特性分布；辐射热流较导热热流大102~103倍，辐射换热促使生长室内温度分布均匀；螺旋线圈的布置方式使晶体截面温度呈非轴对称分布，造成温度梯度的均匀性变差，晶体生长过程中容易产生热应力，影响晶体质量.

关键词: 碳化硅晶体, 温度场, 三维数值模拟, 有限体积法

Abstract: Three dimensional numerical simulation platform for SiC crystal growth furnace was established based on C programing language, where physical model of the furnace was built based on cylindrical coordinate, governing equations for electromagnetic and temperature fields were discretized by finite volume method, and radiation characteristic was studied with the help of S2S (Surface to Surface) radiation model. The least distance method was developed, which was used to check whether radiation surfaces were visible with each other or not efficiently. And then the radiation heat transfer in SiC growth chamber and temperature field of SiC growth furnace were studied quantificationally when the current intensity is 1250 A and the current frequency is 16 kHz. The effects of coil structures on crystal temperature field and its gradient distributions were studied by standard deviation method. The results showed that spiral electromagnetic coil generated asymmetrical temperature field easily. The radiation heat flux was 102~103 more than conduction heat flux. The radiation was helpful to increase temperature evenness. The spiral temperature field on the SiC crystal cross-section reduced the poor homogeneity of temperature gradient, which made the crystal to generate large thermal stress.

Key words: SiC crystal, temperature field, three dimensional numerical simulation, finite volume method

杨春振刘光霞陈成敏许敏王立秋. 碳化硅晶体生长炉辐射换热特性的数值模拟[J]. 过程工程学报, 2018, 18(2): 280-287.

Chunzhen YANG Guangxia LIU Chengmin CHEN Min XU Liqiu WANG. Numerical Simulation of Radiation Heat Transfer in SiC Crystal Growth Furnace[J]. Chin. J. Process Eng., 2018, 18(2): 280-287.

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碳化硅晶体生长炉辐射换热特性的数值模拟

Numerical Simulation of Radiation Heat Transfer in SiC Crystal Growth Furnace

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