Abstract：The VO2 thin film was prepared by the colloid method with industrial V2O5 as raw material. The properties of the VO2 film such as resistance abrupt drop temperature, phase transotion temperature hysteresis are examined. The results show that the VO2 thin film phase transition temperature is 35oC. Preparation method and substrate show greater effect on resistance abrupt change order, which can reach 2~3 order if common glass or quartz glass were employed in underlay by H2 reduction process, while it can reach 1.5~2 order of magnitude by N2 thermal decomposition. The resistance abrupt change order of magnitude is larger for VO2 film with quartz glass as substrate, the transition temperature hysteresis is 1~6oC, and closely related with the resistance abrupt change order, underlay, substrate and preparation method.
程江峰;何国庆. 蜂窝陶瓷固定化酵母细胞啤酒连续主发酵工艺[J]. , 2003, 3(5): 0-0.
HU Zai-yong; XU Chu-shao; YANG Shao-li; CHEN Guang-bi. Phase Transition and Transition Temperature Hysteresis of VO2 Thin Film. , 2003, 3(5): 0-0.
2003, Vol. 3 
